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| CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features * * * * * Isolation Test Voltage 5300 VRMS Long Term Stability Industry Standard Dual-in-Line Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6B 5C 4E Agency Approvals * Underwriters Lab File #E52744 System Code H or J * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending * BSI IEC60950 IEC60065 * FIMKO i179004 e3 Pb Pb-free Order Information Part CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1X006 CNY17-1X007 CNY17-1X009 CNY17-2X006 CNY17-2X007 CNY17-2X009 CNY17-3X006 CNY17-3X007 CNY17-3X009 CNY17-4X006 CNY17-4X007 CNY17-4X009 Remarks CTR 40 - 80 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 CTR 40 - 80 %, DIP-6 400 mil (option 6) CTR 40 - 80 %, SMD-6 (option 7) CTR 40 - 80 %, SMD-6 (option 9) CTR 63 - 125 %, DIP-6 400 mil (option 6) CTR 63 - 125 %, SMD-6 (option 7) CTR 63 - 125 %, SMD-6 (option 9) CTR 100 - 200 %, DIP-6 400 mil (option 6) CTR 100 - 200 %, SMD-6 (option 7) CTR 100 - 200 %, SMD-6 (option 9) CTR 160 - 320 %, DIP-6 400 mil (option 6) CTR 160 - 320 %, SMD-6 (option 7) CTR 160 - 320 %, SMD-6 (option 9) Description The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN pfototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. For additional information on the available options refer to Option Information. Document Number 83606 Rev. 1.5, 26-Oct-04 www.vishay.com 1 CNY17 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Surge current Power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit A mA A mW Output Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current t < 1.0 ms Power dissipation Test condition Symbol BVCEO BVEBO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74) Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tsld t = 1 sec Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 0.4 175 1012 1 0 11 mm mm mm C C C - 55 to + 150 - 55 to + 100 260 www.vishay.com 2 Document Number 83606 Rev. 1.5, 26-Oct-04 CNY17 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reserve current Capacitance Thermal resistance Test condition IF = 60 mA IR = 10 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VBR IR CO Rth 6.0 0.01 25 750 10 Min Typ. 1.25 Max 1.65 Unit V V A pF K/W Output Parameter Collector-emitter capacitance Collector - base capacitance Emitter - base capacitance Thermal resistance Test condition VCE = 5.0 V, f = 1.0 MHz VCB = 5.0 V, f = 1.0 MHz VEB = 5.0 V, f = 1.0 MHz Symbol CCE CCB CEB Rth Min Typ. 5.2 6.5 7.5 500 Max Unit pF pF pF K/W Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Collector-emitter leakage current VCE = 10 V, ICEO CNY17-1 CNY17-2 CNY17-3 CNY17-4 Test condition VF = 10 mA, IC = 2.5 mA Part Symbol VCEsat CC ICEO ICEO ICEO ICEO Min Typ. 0.25 0.6 2.0 2.0 5.0 5.0 50 50 100 100 Max 0.4 Unit V pF nA nA nA nA Current Transfer Ratio Current Transfer Ratio and collector-emitter leakage current by dash number (TambC) Parameter IC/IF Test condition IF = 10 mA, VCE = 5.0 V Part CNY17-1 CNY17-2 CNY17-3 CNY17-4 IF = 1.0 mA, VCE = 5.0 V CNY17-1 CNY17-2 CNY17-3 CNY17-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ. Max 80 125 200 320 Unit % % % % % % % % Document Number 83606 Rev. 1.5, 26-Oct-04 www.vishay.com 3 CNY17 Vishay Semiconductors Switching Characteristics Linear operation (without saturation) Parameter Turn-on time Rise time Turn-off time Fall time Cut-off frequency Test condition IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, Test condition IF = 20 mA IF = 10 mA IF = 5.0 mA Rise time IF = 20 mA IF = 10 mA IF = 5.0 mA Turn-off time IF = 20 mA IF = 10 mA IF = 5.0 mA Fall time IF = 20 mA IF = 10 mA IF = 5.0 mA Symbol ton tr toff tf fCO Part CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 Symbol ton ton ton ton tf tf tf tf toff toff toff toff tf tf tf tf Min Typ. 3.0 2.0 2.3 2.0 250 Max Unit s s s s kHz Switching operation (with saturation) Parameter Turn-on time Min Typ. 3.0 4.2 4.2 6.0 2.0 3.0 3.0 4.6 18 23 23 25 11 14 14 15 Max Unit s s s s s s s s s s s s s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) IF RL=75 IC VCC=5 V IF 1 K VCC=5 V 47 47 icny17_01 icny17_02 Figure 1. Linear Operation ( without Saturation) Figure 2. Switching Operation (with Saturation) www.vishay.com 4 Document Number 83606 Rev. 1.5, 26-Oct-04 CNY17 Vishay Semiconductors (TA = -25C, VCE = 5.0 V) IC/IF = f (IF) (TA = 50C, VCE = 5.0 V) IC/IF = f (IF) 1 2 3 4 1 2 3 4 icny17_06 icny17_03 Figure 3. Current Transfer Ratio vs. Diode Current Figure 6. Current Transfer Ratio vs. Diode Current (TA = 50C, VCE = 5.0 V) IC/IF = f (IF) (TA = 75C, VCE = 5.0 V) 1 2 3 4 1 2 3 4 icny17_06 icny17_07 Figure 4. Current Transfer Ratio vs. Diode Current Figure 7. Current Transfer Ratio vs. Diode Current (TA = 25C, VCE = 5.0 V) IC/IF = f (IF) (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) 4 3 1 2 3 4 2 1 icny17_05 icny17_08 TA Figure 5. Current Transfer Ratio vs. Diode Current Figure 8. Current Transfer Ratio (CTR) vs. Temperature Document Number 83606 Rev. 1.5, 26-Oct-04 www.vishay.com 5 CNY17 Vishay Semiconductors IC = f (VCE) ( IF = 0) ICEO = f (V,T) ( IF = 0) icny17_09 icny17_12 Figure 9. Transistor Characteristics Figure 12. Collector-Emitter off-state Current VCEsat = f (IC) IC = f (VCE) icny17_10 icny17_13 Figure 10. Output Characteristics Figure 13. Saturation Voltage vs Collector Current and Modulation Depth CNY17-1 VF = f (IF) VCEsat = f (IC) icny17_11 icny17_14 Figure 11. Forward Voltage Figure 14. Saturation Voltage vs. Collector Current and Modulation Depth CNY17-2 www.vishay.com 6 Document Number 83606 Rev. 1.5, 26-Oct-04 CNY17 Vishay Semiconductors VCEsat = f (IC) icny17_15 Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth CNY17-3 V VCEsat = f (IC) icny17_16 Figure 16. Saturation Voltage vs. Collector Current and Modulation Depth CNY17-4 Ptot = f (TA) icny17_18 Figure 17. Permissible Power Dissipation for Transistor and Diode Document Number 83606 Rev. 1.5, 26-Oct-04 www.vishay.com 7 CNY17 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 www.vishay.com 8 Document Number 83606 Rev. 1.5, 26-Oct-04 CNY17 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83606 Rev. 1.5, 26-Oct-04 www.vishay.com 9 |
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